2D Materials Synthesis & Characterisation
CVD growth of graphene, hBN, TMDCs and halide compounds with controlled layer uniformity.
Overview
What we study
Controllable CVD growth of wafer-scale graphene and other 2D materials with precise layer uniformity for integrated circuit applications.
We prepare graphene, hexagonal boron nitride (hBN), transition metal dichalcogenides (TMDCs) and halide compounds, then characterise film quality, grain structure and transferability at wafer scale.
- Methods
- CVD growth, bubbling and face-to-face transfer, structural and spectroscopic characterisation
- Materials
- Graphene, hBN, TMDCs, halide compounds and related 2D crystals
- Goal
- Layer-uniform wafers suitable for stacking, devices and integrated electronics
Key questions
Where the science is heading
Substrate engineering, growth-condition control and proton-assisted routes yield ultra-flat, uniform films over wafer-scale areas.
Bubbling transfer and face-to-face transfer keep graphene and related films intact while reducing residue that would otherwise limit stacking and devices.
Grain boundaries, wrinkles and thickness variation set electronic quality; microscopy and spectroscopy identify the defects that matter for integration.
Interested in 2D materials synthesis?
We welcome students and postdocs who want to work on wafer-scale CVD growth.